Surface acoustic wave device

Electrical generator or motor structure – Non-dynamoelectric – Piezoelectric elements and devices

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Details

310313D, 333152, 364821, H01L 4108

Patent

active

046833951

ABSTRACT:
A monolithic surface acoustic wave convolver has a structure of piezoelectric layer/insulative layer/p(n)-type semiconductive layer
(p)-type semiconductive layer
.sup.+ (p.sup.+)-type semiconductive substrate in which the p(n)-type semiconductive layer has a uniform thickness, and its acceptor (donor) concentration and thickness are selected to allow a depletion layer to expand throughout it under zero bias. The p(n)-type semiconductive layer and n(p)-type semiconductive layer are made by epitaxially growing the n(p)-type semiconductive layer on the n.sup.+ (p.sup.+)-type semiconductive substrate and subsequently change the conductivity of the surface portion of the epitaxial layer by impurity diffusion or ion implantation.

REFERENCES:
patent: 4259726 (1981-03-01), Joly
patent: 4389590 (1983-06-01), Whitlock
patent: 4592009 (1986-05-01), Masheff
patent: 4600853 (1986-07-01), Whitlock et al.
patent: 4611140 (1986-09-01), Whitlock et al.

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