Surface acoustic wave device

Details Surface acoustic wave device Surface acoustic wave device

1997-02-19

1999-03-30

Turner, Archene

Stock material or miscellaneous articles

Web or sheet containing structurally defined element or...

Physical dimension specified

310313R, 310313A, 428210, 428408, 428701, 428702, H01L 4116

Patent

active

058886460

ABSTRACT:
A surface acoustic wave device comprises a diamond layer (12) or a substrate (11) with a diamond layer (12) formed thereon, an Al electrode (13) formed on the diamond layer (12), and a ZnO piezoelectric thin film layer (14) formed on the diamond layer (12) with the Al electrode (13) covered by the ZnO piezoelectric thin film layer (14). The ZnO piezoelectric thin film layer (14) has a thickness h1 within a range defined by 0.65.ltoreq.kh1.ltoreq.0.75 while the Al electrode (13) has a thickness h2 within a range defined by 0.03.ltoreq.kh2.ltoreq.0.04, where k is given by k=2 .pi./.lambda. and .lambda. represents an electrode period.

REFERENCES:
patent: 5061870 (1991-10-01), Ieki et al.
patent: 5160869 (1992-11-01), Nakahata et al.
patent: 5576589 (1996-11-01), Dreifus et al.
S. Shikata et al., "1.5 GHz Saw Bandpass Filter Using Poly-Crystalline Diamond," 1993 Ultrasonics Symposium, pp. 277-280.

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