Surface acoustic wave convolver

Electrical generator or motor structure – Non-dynamoelectric – Piezoelectric elements and devices

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310313D, H01L 4108

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active

050916696

ABSTRACT:
An SAW convolver having a piezoelectric film / insulating layer / low impurity concentration Si epitaxial layer / high impurity concentration Si epitaxial layer structure is disclosed, in which the low impurity concentration Si epitaxial layer is replaced by a GaAs epitaxial layer. In this way, it is possible to improve concentration characteristics with respect to those obtained by the prior art structure described above and it is unnecessary to control the thickness of the epitaxial layer so strictly as for the prior art structure.

REFERENCES:
patent: 4427913 (1984-01-01), Iafrate et al.
patent: 4539501 (1985-09-01), Trong et al.
patent: 4683395 (1987-07-01), Mitsutsuka
patent: 4757226 (1988-07-01), Mitsutsuka et al.
patent: 4900969 (1990-02-01), Mitsutsuka et al.
patent: 4967113 (1990-10-01), Mitsutsuka
"Integrating Acoustic Surface Wave and Silicon Transistor Technology", by R. Chicotka et al., IBM Tech. Disclosure Bulletin, vol. 13, No. 11, Apr. 1971.
"New Modes in III-V Monolithic SAW Devices", by J. Henaff et al., Inst. Phys. Conf. Ser. No. 63:Chapter 9; Int. Symp. GaAs and Related Compounds, 1981.
"New SSBW Mode in GaAs", by J. Henaff et al., 28 Apr. 1981, written for Electronics Letters, vol. 17, No. 12, 11 Jun. 1981.

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