Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Reexamination Certificate
2006-06-20
2006-06-20
Wilson, Allan R. (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
C257S093000
Reexamination Certificate
active
07064406
ABSTRACT:
A pixel cell having a halogen-rich region localized between an oxide isolation region and a photosensor. The halogen-rich region prevents leakage from the isolation region into the photosensor, thereby suppressing dark current in imagers.
REFERENCES:
patent: 5485019 (1996-01-01), Yamazaki et al.
patent: 5618379 (1997-04-01), Armacost et al.
patent: 5985689 (1999-11-01), Gofuku et al.
patent: 6211040 (2001-04-01), Liu et al.
patent: 6271554 (2001-08-01), Nozaki et al.
patent: 6362040 (2002-03-01), Tews et al.
patent: 6566722 (2003-05-01), Lin et al.
patent: 6780666 (2004-08-01), McClure
B.C. Burkey et al., “The Pinned Photodiode for an Interline-Transfer CCD Image Sensor”, CH2099-0/84/0000-0028, 1984.
Masahiro Ushiyama et al., “Suppression of Anomalous Leakage Current in Tunnel Oxides by Fluorine Implantation to Realize Highly Reliable Flash Memory,” 1999 Symposium on VLSI Technology Digest of Technical Papers.
Kiyonori Ohyu et al., “Improvement of SiO2/Si Interface Properties Utilising Fluorine Ion Implantation and Drive-in Diffusion,” Japanese Journal of Applied Physics, vol. 28, No. 6, Jun. 1989, pp. 1041-1045.
Dickstein , Shapiro, Morin & Oshinsky, LLP
Micro)n Technology, Inc.
Wilson Allan R.
LandOfFree
Supression of dark current in a photosensor for imaging does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Supression of dark current in a photosensor for imaging, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Supression of dark current in a photosensor for imaging will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3705035