Suppression of water vapor absorption in glass encapsulation

Details Suppression of water vapor absorption in glass encapsulation Suppression of water vapor absorption in glass encapsulation

1991-06-25

1992-03-10

Lindsay, Robert L.

Fishing, trapping, and vermin destroying

437238, 437240, 437982, 148DIG43, 148DIG133, 357 52, 357 54, H01L 2934

Patent

active

050949845

ABSTRACT:
A method for encapsulation of an integrated circuit array that suppresses or eliminates absorption and subsequent out-gassing of water vapor and suppresses or eliminates out-gassing of toxic constituents of the encapsulation layer such as trimethyl borate. A first layer of borophosphosilicate glass is deposited on the integrated circuit array, followed immediately by deposit of a thin cap layer of undoped oxide of silicon. The method also allows use of boron and phosphorous concentrations in the borophosphosilicate glass as high as 9 weight percent with no loss of stability of that layer, before or after thermal treatment. Reflow processing temperatures as low as T.sub.r =700.degree.-900.degree. C. may be used here. Alternatively, silicon nitride can replace the silicon oxide in the cap layer, using either a high temperature process or a lower temperature plasma-enhanced process.

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