Suppression of graphite formation during laser etching of diamon

Details Suppression of graphite formation during laser etching of diamon Suppression of graphite formation during laser etching of diamon

1994-05-25

1995-05-30

Kunemund, Robert

Adhesive bonding and miscellaneous chemical manufacture

Differential fluid etching apparatus

With microwave gas energizing means

118728, C23F 102

Patent

active

054197988

ABSTRACT:
Graphite formation on a diamond surface during laser etching is inhibited or the graphite is removed by contact with a gaseous material such as elemental hydrogen, elemental oxygen, an inert gas or a source of hydroxyl radicals. Preferably, the article being etched is cooled and maintained in an inert atmosphere during etching.

REFERENCES:
patent: 5154945 (1992-10-01), Baldwin
patent: 5250137 (1993-10-01), Arami
patent: 5328715 (1994-07-01), Iacovangelo
patent: 5328855 (1994-07-01), Kitabatake
"Processing of CVD diamond films by YAG laser" Tezuda, Japa Soc. of Precision Eng., vol. 56, No. 12, pp. 2255-2260, Dec. 1990.
"Excimer-laser etching of diamond and hard carbon films by direct writing and optical projection Rothschild", IEEE vol. 4, No. 1, pp. 310-314, Jan.-Feb. 1986 8 Ref.

Affiliated with

Also associated with

Rating

Suppression of graphite formation during laser etching of diamon does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Suppression of graphite formation during laser etching of diamon, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Suppression of graphite formation during laser etching of diamon will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-359124