Suppression of dark current in a photosensor for imaging

Details Suppression of dark current in a photosensor for imaging Suppression of dark current in a photosensor for imaging

2007-10-09

2007-10-09

Le, Thao P. (Department: 2818)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

C438S595000, C257S446000, C257S093000, C257S374000

Reexamination Certificate

active

11052203

ABSTRACT:
A pixel cell having a halogen-rich region localized between an oxide isolation region and a photosensor. The halogen-rich region prevents leakage from the isolation region into the photosensor, thereby suppressing dark current in imagers.

REFERENCES:
patent: 5485019 (1996-01-01), Yamazaki et al.
patent: 5618379 (1997-04-01), Armacost et al.
patent: 5985689 (1999-11-01), Gofuku et al.
patent: 6271554 (2001-08-01), Nozaki et al.
patent: 6362040 (2002-03-01), Tews et al.
patent: 6566722 (2003-05-01), Lin et al.
patent: 6780666 (2004-08-01), McClure
patent: 2003/0143812 (2003-07-01), Lin
patent: 2004/0250392 (2004-12-01), Chou et al.
patent: 2005/0001248 (2005-01-01), Rhodes
patent: 2005/0112833 (2005-05-01), Hareland et al.
patent: 2005/0145902 (2005-07-01), Mouli
patent: 2006/0008938 (2006-01-01), Mouli et al.
patent: 2006/0138470 (2006-06-01), Han
patent: 2006/0246714 (2006-11-01), Derraa
Chapter 1, “Ionizing radiation effects on MOS devices and lcs”, pp. 35-62, unknown date.
B.C. Burkey et al., “The Pinned Photodiode for an Interline-Transfer CCD Image Sensor”, CH2099-0/84/0000-0028, 1984.
Masahiro Ushiyama et al., “Suppression of Anomalous Leakage Current in Tunnel Oxides by Fluorine Implantation to Realize Highly Reliable Flash Memory,” 1999 Symposium on VLSI Technology Digest of Technical Papers.
Kiyonori Ohyu et al., “Improvement of SiO2/Si Interface Properties Utilising Fluorine Ion Implantation and Drive-in Diffusion,” Japanese Journal of Applied Physics, vol. 28, No. 6, Jun. 1989, pp. 1041-1045.
Singapore Patent Office Communication issued Feb. 19, 2007.

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