Suppressing recombination in an electronic device

Details Suppressing recombination in an electronic device Suppressing recombination in an electronic device

2006-11-15

2011-12-20

Toledo, Fernando L (Department: 2895)

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

Non-single crystal, or recrystallized, material forms active...

C257S050000, C257S078000, C257S094000, C257SE27120, C257SE33005

Reexamination Certificate

active

08080824

ABSTRACT:
A semiconductor material structure includes at least one region capable of generating electrons and holes each having an associated mean kinetic energy during operation. A material layer in proximity to the region provides an associated potential energy larger than the mean kinetic energy associated with the generated electrons and the mean kinetic energy associated with the holes.

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