Chemistry: electrical and wave energy – Apparatus – Coating – forming or etching by sputtering
Patent
1976-03-31
1977-07-26
Mack, John H.
Chemistry: electrical and wave energy
Apparatus
Coating, forming or etching by sputtering
C23C 1500
Patent
active
040381714
ABSTRACT:
A supported plasma sputtering apparatus is described having shaped electrical fields in the electron discharge region between the cathode and anode and the sputter region between the target and substrate while such regions are free of any externally applied magnetic field to provide a high deposition rate which is substantially uniform over a wide area. Plasma shaping electrodes separate from the anode and target shape the electrical fields in the electron discharge region and the sputter region to provide a high density plasma. The anode surrounds the target to cause substantially uniform sputtering over a large target area. In one embodiment the anode is in the form of an annular ring surrounding a flat target surface, such anode being provided with a ribbed upper surface which shields portions of the anode from exposure to sputtered material to maintain the electron discharge for a long stable operation. Several other embodiments accomplish the same result by using different anodes which either shield the anode from sputtered material, remove the sputtered coating on the anode by heating, or simultaneously mix sputtered metal from the auxiliary target with sputtered insulator from the main target so the resultant coating is conductive. A radio frequency potential alone or together with a D.C. potential, may be applied to the target for a greater sputtering rate.
REFERENCES:
patent: 3393142 (1968-07-01), Moseson
patent: 3501393 (1970-03-01), Wehner et al.
patent: 3514391 (1970-05-01), Hablanian et al.
patent: 3583899 (1971-06-01), Aronson
patent: 3616452 (1971-10-01), Pessot et al.
patent: 3661758 (1972-05-01), Jackson et al.
patent: 3707452 (1972-12-01), Lester et al.
patent: 3711398 (1973-01-01), Clarke
patent: 3763031 (1973-10-01), Scow et al.
patent: 3779891 (1973-12-01), Vegh et al.
patent: 3856579 (1974-12-01), Allen et al.
patent: 3901784 (1975-08-01), Quinn et al.
E. D. McClanahan et al., "Initial Work on the Application of Protective Coatings to Marine Gas Turbine Components by High-Rate Sputtering", Am. Soc. Mech. Eng. (1974).
D. H. Grantham et al., "High-Rate rF Sputtering System", J. Vac. Sci. Tech. , vol. 7, pp. 343-346, (1969).
T. C. Tisone et al., "Low-Voltage Triode Sputtering with a Confined Plasma", J. Vac. Sci. Tech., vol. 12, No. 5, pp. 1058-1066, Sept./Oct. 1975.
Laegreid Nils
McClanahan, Jr. Edwin D.
Moss Ronald W.
Battelle (Memorial Institute)
Mack John H.
Weisstuch Aaron
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