Support with integrated deposit of gas absorbing material...

Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – With desiccant – getter – or gas filling

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C257S731000

Reexamination Certificate

active

10211426

ABSTRACT:
The specification teaches a device for use in the manufacturing of microelectronic, microoptoelectronic or micromechanical devices (microdevices) in which a contaminant absorption layer improves the life and operation of the microdevice. In a preferred embodiment the invention includes a mechanical supporting base, and a layer of a gas absorbing or purifier material is deposited on the base by a variety of techniques and a layer for temporary protection of the purification material is placed on top of the purification material. The temporary protection material is compatible for use in the microdevice and can be removed during the manufacture of the microdevice.

REFERENCES:
patent: 3214381 (1965-10-01), Baldauf et al.
patent: 4630095 (1986-12-01), Otsuka et al.
patent: 5599749 (1997-02-01), Hattori
patent: 5614785 (1997-03-01), Wallace et al.
patent: 5760433 (1998-06-01), Ramer et al.
patent: 5866978 (1999-02-01), Jones et al.
patent: 5921461 (1999-07-01), Kennedy et al.
patent: 5961362 (1999-10-01), Chalamala et al.
patent: 5961750 (1999-10-01), Boffito et al.
patent: 6499354 (2002-12-01), Najafi et al.
patent: 2003/0085438 (2003-05-01), Habibi et al.
patent: 2003/0138656 (2003-07-01), Sparks
patent: 0837502 (1998-04-01), None
patent: 09-306920 (1997-11-01), None
patent: WO 00/61832 (2000-10-01), None
Int'l. Search Report from Int'l. Appln. No. PCT/IT02/00465, filed Jul. 16, 2002—Report Mailed Jun. 13, 1003.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Support with integrated deposit of gas absorbing material... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Support with integrated deposit of gas absorbing material..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Support with integrated deposit of gas absorbing material... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3870690

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.