Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – With desiccant – getter – or gas filling
Reexamination Certificate
2007-02-20
2007-02-20
Pham, Thanhha S. (Department: 2813)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
With desiccant, getter, or gas filling
C257S731000
Reexamination Certificate
active
10211426
ABSTRACT:
The specification teaches a device for use in the manufacturing of microelectronic, microoptoelectronic or micromechanical devices (microdevices) in which a contaminant absorption layer improves the life and operation of the microdevice. In a preferred embodiment the invention includes a mechanical supporting base, and a layer of a gas absorbing or purifier material is deposited on the base by a variety of techniques and a layer for temporary protection of the purification material is placed on top of the purification material. The temporary protection material is compatible for use in the microdevice and can be removed during the manufacture of the microdevice.
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Int'l. Search Report from Int'l. Appln. No. PCT/IT02/00465, filed Jul. 16, 2002—Report Mailed Jun. 13, 1003.
Pham Thanhha S.
Saes Getters S.p.A.
TIPS Group
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