Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified configuration
Reexamination Certificate
2005-10-12
2009-12-01
Purvis, Sue (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified configuration
C257S775000, C257SE23012, C257SE23015
Reexamination Certificate
active
07626268
ABSTRACT:
Support structures for semiconductor devices and methods of manufacturing thereof are disclosed. In some embodiments, the support structures include a plurality of support members that is formed in a substantially annular shape beneath a wire bond region. The central region inside the substantially annular shape of the plurality of support members may be used to route functional conductive lines for making electrical contact to active areas of the semiconductor device. Dummy support structures may optionally be formed between the functional conductive lines. The support structures may be formed in one or more conductive line layers and semiconductive material layers of a semiconductor device. In other embodiments, support members are not formed in an annular shape, and are formed in insulating layers that do not comprise low dielectric constant (k) materials.
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Goebel Thomas
Kaltalioglu Erdem
Kim Sun-Oo
Infineon - Technologies AG
Purvis Sue
Slater & Matsil L.L.P.
Soderholm Krista
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