Active solid-state devices (e.g. – transistors – solid-state diode – Lead frame – With dam or vent for encapsulant
Reexamination Certificate
2005-12-27
2005-12-27
Eckert, George (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Lead frame
With dam or vent for encapsulant
C257S691000, C257S668000, C257S778000, C257S784000, C257S692000, C257S650000
Reexamination Certificate
active
06979887
ABSTRACT:
Support matrices for semiconductors are often encapsulated in a region of the bonding leads, the so-called bonding channel. The encapsulation is effected using a dispensable material that can flow onto the support matrix and causes contamination there. In order to prevent this flow, the support matrix for integrated semiconductors has a frame, conductor track structures and at least one bonding channel. In the bonding channel bonding leads or wires for connecting the conductor track structures to the integrated semiconductor are disposed. Disposed along the edge of the bonding channel a barrier for preventing the flow of flowable material from the bonding channel onto the frame and/or the conductor track structures. A method for producing such support matrices is likewise disclosed.
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Kahlisch Knut
Mieth Henning
Chu Chris C.
Eckert George
Greenberg Laurence A.
Infineon - Technologies AG
Locher Ralph E.
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