Semiconductor device manufacturing: process – Making passive device – Trench capacitor
Reexamination Certificate
2006-06-27
2006-06-27
Ghyka, Alexander (Department: 2812)
Semiconductor device manufacturing: process
Making passive device
Trench capacitor
C438S244000, C438S254000, C438S396000
Reexamination Certificate
active
07067385
ABSTRACT:
A method for forming double-sided capacitors for a semiconductor device includes forming a dielectric structure which supports capacitor bottom plates during wafer processing. The structure is particularly useful for supporting the bottom plates during removal of a base dielectric layer to expose the outside of the bottom plates to form a double-sided capacitor. The support structure further supports the bottom plates during formation of a cell dielectric layer, a capacitor top plate, and final supporting dielectric. An inventive structure is also described.
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Ghyka Alexander
Micro)n Technology, Inc.
Wells St. John P.S.
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