Support for microelectronic, microoptoelectronic or...

Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – With desiccant – getter – or gas filling

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

Reexamination Certificate

active

06897551

ABSTRACT:
The specification teaches a device for use in the manufacturing of microelectronic, microoptoelectronic or micromechanical devices (microdevices) in which a contaminant absorption layer improves the life and operation of the microdevice. In a preferred embodiment the invention includes a mechanical supporting base, and discrete deposits of gas absorbing or contaminant removing material on the base by a variety of techniques and a layer for temporary protection of the contaminant removing material on top of the contaminant removing material. Passages are created in the layer which expose the contaminant removing material to atmosphere. The device may be used as a covering for the microdevice as well.

REFERENCES:
patent: 3214381 (1965-10-01), Baldauf et al.
patent: 4630095 (1986-12-01), Otsuka et al.
patent: 5520563 (1996-05-01), Wallace et al.
patent: 5656889 (1997-08-01), Niiyama et al.
patent: 5882727 (1999-03-01), Corazza et al.
patent: 5921461 (1999-07-01), Kennedy et al.
patent: 0 837 502 (1998-04-01), None
patent: WO 0061832 (2000-10-01), None
International Search Report.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Support for microelectronic, microoptoelectronic or... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Support for microelectronic, microoptoelectronic or..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Support for microelectronic, microoptoelectronic or... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3372714

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.