Support and anchoring mechanism for membranes in selectively res

Details Support and anchoring mechanism for membranes in selectively res Support and anchoring mechanism for membranes in selectively res

1983-01-13

1984-12-04

Tung, T.

Chemistry: electrical and wave energy

Apparatus

Electrolytic

204418, 357 23, 357 25, G01N 2746

Patent

active

044862920

ABSTRACT:
In the formation of a chemically sensitive field effect device, prior to formation of the gate membrane, an aluminum pad is disposed over the gate, and a polyimide layer is disposed thereover. Photoresist and etching steps produce openings in the polyimide to form a gridwork which is anchored to the device on the periphery of the gate. The aluminum layer is etched completely away, forming a void defined by the suspended polyimide mesh on one side, and the gate insulator on the other. Polymeric membrane is formed in the void by insertion in liquid form.

REFERENCES:
patent: 3410778 (1968-11-01), Krasberg
patent: 3645875 (1972-02-01), Record et al.
patent: 4020830 (1977-05-01), Johnson et al.
patent: 4180771 (1979-12-01), Guckel
patent: 4273636 (1981-06-01), Shimada et al.
patent: 4302530 (1981-11-01), Zemel
patent: 4305802 (1981-12-01), Koshiishi
Blockburn, "The Suspended Mesh Ion Selective Field Effect Transistor", Dec. 1981, pp. 1-22.
Blockburn, "The Suspended Mesh ISFET", Jan. 1982, pp. 1-5.

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