Supersonic molecular beam etching of surfaces

Details Supersonic molecular beam etching of surfaces Supersonic molecular beam etching of surfaces

1991-11-01

1994-02-15

Hearn, Brian E.

Adhesive bonding and miscellaneous chemical manufacture

Differential fluid etching apparatus

With microwave gas energizing means

118715, 118722, 156643, H01L 2100

Patent

active

052863310

ABSTRACT:
In supersonic molecular beam etching, the reactivity of the etchant gas and substrate surface is improved by creating etchant gas molecules with high internal energies through chemical reactions of precursor molecules, forming clusters of etchant gas molecules in a reaction chamber, expanding the etchant gas molecules and clusters of etchant gas molecules through a nozzle into a vacuum, and directing the molecules and clusters of molecules onto a substrate. Translational energy of the molecules and clusters of molecules can be improved by seeding with inert gas molecules. The process provides improved controllability, surface purity, etch selectivity and anisotropy. Etchant molecules may also be expanded directly (without reaction in a chamber) to produce clusters whose translational energy can be increased through expansion with a seeding gas.

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Ming L. Yu and Benjamin N. Eldridge, Real-Time Study of Oxygen on Si(100), Physical Review Letters, Apr. 20, 1987, pp. 1691-1694.
Nishino et al., Damage Free Selective Etching of Si Native Oxide Employing Fluorine Atoms and Nitrogen Hydrides Produced by NH.sub.3 & NF.sub.3 Microwave Discharge, 1989 Dry Process Symposium, pp. 90-93.

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