Supersaturated rare earth doped semiconductor layers by chemical

Details Supersaturated rare earth doped semiconductor layers by chemical Supersaturated rare earth doped semiconductor layers by chemical

1995-06-06

1997-07-08

Jackson, Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With particular dopant material

257103, 372 43, H01L 3300

Patent

active

056464258

ABSTRACT:
A CVD process for producing a rare earth-doped, epitaxial semiconductor layer on a substrate is disclosed. The process utilizes a silane or germane and a rare earth compound in the gas phase. By this method single phase, rare earth-doped semiconductor layers, supersaturated in the rare earth, are produced. The preferred rare earth is erbium and the preferred precursors for depositing erbium by CVD are erbium hexafluoroacetylacetonate, acetylacetonate, tetramethylheptanedionate and flurooctanedionate. The process may be used to produce optoelectronic devices comprising a silicon substrate and an erbium-doped epitaxial silicon film.

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