Supermolecular structureS and devices made from same

Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C257S017000, C257S022000, C257S197000

Reexamination Certificate

active

06897470

ABSTRACT:
Supermolecular structures and devices made from same. Semiconductor materials and devices are manufactured and provided which use controlled, discrete distribution of and positioning of single impurity atoms or molecules within a host matrix to take advantage of single charge effects. Single-dopant pn junctions and single-dopant bipolar cells are created. Each bipolar cell can function as a bistable device or an oscillator, depending on operating temperature. The cells can be used alone or in an array to make useful devices by adding an insulating substrate and contact electrodes.

REFERENCES:
patent: 5981316 (1999-11-01), Yamada et al.
patent: 6068698 (2000-05-01), Schmidt
patent: 6525336 (2003-02-01), Kondo et al.
patent: 0 781 727 (1997-02-01), None
patent: WO 9913511 (1999-03-01), None
D. M. Eigler et al., “Postioning single atoms with a scanning tunnelling microscope”,Nature, vol. 344 (Apr. 1990) pp 524-526.
P. Bedrossian et al., “Demonstration of the tunnel-diode effect on an atomic”, scale,Nature, vol. 342 (Nov. 1989) pp 258-260.
Deiraju, G.R. (Ed.),Thoughts on Crystals as Supramolecules, The Crystal as a Supermolecular Entity, John Wiley and Sons Ltd., 1996.
Feynman, R.P.Infinitesimal Machinery, Journal of MicroMechanical Systems, vol. 2, No. 1, Mar. 1993, pp. 4-14.
Feynman, R.P.,There's Plenty of Room at the Bottom, Engineering and Science, vol. 23, 1960, pp. 22-36, Reprinted in Anthony J.G. Hey (Ed.), Feynman and Computation: Exploring the Limits of Computers, Perseus Books, 1999.
Giro, et al.,Single Layer Electroluminescent Devices Based on Molecularly Doped Polymer(MDP)3Films, Synthetic Metals, vol. 84, 1997, pp. 379-380.
Johnson, et al.,Electroluminescence From Single Layer Molecularly Doped Polymer Films, SPIE, vol. 1910, 1993, pp. 6-14.
Metzger, R.M.,Electrical Rectification by a Molecule: The Advent of Unimolecular Electronic Devices, Accounts of Chemical Research, vol. 32, No. 11, 1999, pp. 950-957.
Nikzad, et al.,Direct Detection and Imaging of Low-Energy Electrons With Delta-Doped Charge-Coupled Devices, Applied Physics Letters, vol. 73, No. 23, Dec. 7, 1998, pp. 3417-3419.
Stormer, et al.,GaAs Field-Effect Transistor With An Atomically Precise Ultrashort Gate, Appl. Phys. Lett., vol. 59, No. 9, Aug. 26, 1991, pp. 1111-1113.
Tucker, et al.,Prospects for Atomically Ordered Device Structures Based on STM Lithography, Solid-State Electronics, vol. 42, No. 7-8, 1998, pp. 1061-1067.
Zaknoune, et al.,High-Power V-Band Gaa53In9P/Ina2Gaa8As Pseudomorphic HEMT Grown by Gas Source Molecular Beam Epitaxy, IEEE Microwave and Guided Wave Letters, vol. 9, No. 1, Jan. 1999, pp. 28-30.
Saito, S. et al., “Electronic Structure of Si29and C29Fullerides,”Proceedings of the Symposium on Recent Advances in the Chemistry and Physics of Fullarenes and Related Materials, vol. 3, pp. 457-461, 1996.
Cavin, R. et al., “Semiconductor research needs in the nanoscale physical sciences: a Semiconductor Research Corporation working paper,”Journal of Nanoparticle Research 2; pp. 213-235; 2000.
Ozin, Geoffrey A.; “Nanochemistry: Synthesis in Diminishing Dimensions,”Advanced Materials4,No. 10: pp. 612-649; 1992.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Supermolecular structureS and devices made from same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Supermolecular structureS and devices made from same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Supermolecular structureS and devices made from same will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3392795

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.