Superluminescent edge emitting device with apparent vertical lig

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With heterojunction

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257 98, H01L 3300, H01L 2978

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active

054988837

ABSTRACT:
A superluminescent edge emitting device is fabricated to have apparent vertical light emission. The superluminescent device is comprised of a semiconductor supporting structure having a major surface. A light emitting portion is formed above a first portion of the major surface, wherein the light emitting portion is configured in a substantially circular shape to suppress lasing and has sidewalls, and wherein light is emitted from the sidewalls of the light emitting portion. An non-emitting portion is formed above a second portion of the major surface and adjacent to the light emitting portion, wherein the non-emitting portion has sidewalls, and wherein the sidewalls of the light emitting portion and the sidewalls of the non-emitting portion are configured to direct the light emitted from the light emitting portion substantially perpendicular to the major surface.

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