Superluminescent diode with stripe shaped doped region

Details Superluminescent diode with stripe shaped doped region Superluminescent diode with stripe shaped doped region

1993-07-02

1994-10-18

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With heterojunction

257 96, 257 97, 257102, 257103, 372 45, 372 46, 372 48, H01L 3300

Patent

active

053571240

ABSTRACT:
A superluminescent diode (SLD) includes a substrate, a double heterojunction structure including a first conductivity type first cladding layer, an undoped active layer, and a second conductivity type second cladding layer. A second conductivity type first diffused region having a stripe shape and a length extends from a front facet halfway to the rear facet through which current is injected into the active layer and a second conductivity type second diffused region spaced from the first diffused region extends through the second cladding layer and the active layer and into the first cladding layer between the first diffused region and the rear facet of the device. Even when operating at high light output power, light reflections are reduced so that the SLD operates with hardly any laser oscillation.

REFERENCES:
patent: 4742378 (1988-05-01), Ito et al.
patent: 4901123 (1990-02-01), Noguchi et al.
patent: 5223722 (1993-06-01), Nagai et al.
Imanaka, "Cavity Length Dependence of Optical Characteristics In High Power Narrow Stripe GaAs Superluminescent Diodes", IEEE Photonics Technology Letters, vol. 2, No. 10, Oct. 1990, pp. 705-707.

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