Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Patent
1995-02-24
1996-11-12
Crane, Sara W.
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
257 13, 257 85, 257 95, 257 96, 257 97, 257461, 372 45, 372 46, 372 48, 372 50, H01L 2715, H01L 2906, H01L 3100, H01L 3300
Patent
active
055743048
ABSTRACT:
A superluminescent diode includes a semiconductor substrate of a first conductivity type. A lower cladding layer of the first conductivity type is provided on the semiconductor substrate. An active layer is provided on the lower cladding layer. An upper cladding layer of a second conductivity type opposite to the first conductivity type is provided on the active layer. A current blocking layer of the first conductivity type is buried in the upper cladding layer. The current blocking layer has a stripe-shaped groove serving as a current-injection region. The current-injection region is formed in a manner that it extends from an end face of a chip to the inside of the chip, and has a length shorter than that of the chip. The current blocking layer is made of a material having a band gap energy not greater than that of the active layer and a refractive index not smaller than that of the active layer so that light advancing in the active layer is absorbable.
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Mushiage Masato
Shakuda Yukio
Yamauchi Tatsuo
Crane Sara W.
Rohm & Co., Ltd.
Tang Alice W.
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