Superluminescent diode and single mode laser

Coherent light generators – Particular active media – Semiconductor

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372 50, 372 92, 372 49, H01S 319

Patent

active

048436119

ABSTRACT:
A buried heterostructure window device has an elongated layer of gain medium surrounded by a lower index of refraction medium for guiding light along the length of the gain medium. A window and an antireflective layer are deposited on the output end of the gain layer to minimize reflections. A portion of the gain medium nearer the output end of the device is electrically pumped, leaving an unpumped end of the gain medium remote from the output end. The unpumped portion of the gain medium absorbs light travelling along the length of the gain medium. This inhibits reflection from the end of the gain medium remote from the output end. When the device is pumped with a moderate power level, strong superluminescent output is obtained. When the device is pumped well above the lasing threshold by reason of "burning through" the unpumped absorbing portion of the gain medium, a single mode laser is obtained with side band power at least 20 db below the power of the principal oscillation mode. "Burning through" the unpumped absorbing portion can be inhibited by extracting current carriers from that portion of the medium.

REFERENCES:
patent: 4562569 (1985-12-01), Yariv et al.
patent: 4563765 (1986-01-01), Tsang et al.
patent: 4686679 (1987-08-01), Yano et al.
patent: 4764934 (1988-09-01), Kwong et al.
Ungar et al., "High-Power GraAlAs Window Lasers"; Laser Applications; Sep. 1985.
Dutta et al.; "Optical Properties of a 1.3-um InGaAsP Superluminescent Diode"; IEDE Transet. of Elect Devices vol. ED30(4); 4/83.

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