Superluminescent diode

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With heterojunction

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257 94, 257 98, 372 45, 372 46, H01L 3300, H01S 319

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active

052237222

ABSTRACT:
A superluminescent diode includes a substrate; a double heterojunction structure including a first conductivity type cladding layer, an undoped or first or second conductivity type active layer, and a second conductivity type cladding layer disposed on said substrate; a first conductivity type cap layer disposed on the second conductivity type cladding layer; and a second conductivity type stripe-shaped diffusion region penetrating the cap layer and reaching into the second conductivity type cladding layer. Current is injected into the active layer through the diffusion region. The stripe-shaped diffusion region extends from a front facet toward but not reaching a rear facet and is inclined an angle in a range from 3 to 20 degrees with respect to the front facet. Accordingly, repetition of reflection and amplification of light having a directionality perpendicular to the facets is decreased and the effective reflection of light from both facets is decreased, resulting in an SLD that can operate stably even in high power output operation without inviting laser oscillation and that can be produced with a high yield.

REFERENCES:
patent: 4821277 (1989-04-01), Alphonse et al.
patent: 4901123 (1990-02-01), Noguchi et al.
Alphonse et al, "Low Spectral Modulation High-Power Output from a new AlGaAs Superluminescent Diode/Optical Amplifier Structure" Applied Physics Letters, vol. 55, No. 22, Nov. 1989, pp. 2289-2291.
Alphonse et al, "High-Power Superluminescent Diodes", IEEE Journal of Quantum Electronics, vol. 24, No. 12, Dec. 1988, pp. 2454-2457.

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