Amplifiers – Signal feedback – Combined with control of bias voltage of signal amplifier
Patent
1988-03-14
1990-01-23
Davie, James W.
Amplifiers
Signal feedback
Combined with control of bias voltage of signal amplifier
330 43, 372 45, 372108, 350 9617, H01L 3300, H01S 319
Patent
active
048961957
ABSTRACT:
A semiconductor diode structure including a light-absorbing substrate, an active region, and a pair of cladding layers surrounding the active region. Lasing is inhibited by means of an inclined end facet, which reflects light down into the substrate, where it is absorbed, to provide only one pass of the spontaneously emitted light through the active region. One disclosed embodiment has a conventional end facet for the out-coupling of edge-emitted light. Another embodiment includes a surface-emitting facet formed in an opening in the substrate adjacent to the inclined facet. Yet another embodiment has two inclined facets. One inclined facet may serve to reflect light into the absorbing substrate, or both may serve to reflect light through separate surface emitting facets.
REFERENCES:
patent: 3996492 (1976-12-01), McGroddy
patent: 3996528 (1976-12-01), Blum et al.
patent: 4163953 (1979-08-01), Springthorpe et al.
patent: 4216485 (1980-08-01), Page
patent: 4633476 (1986-12-01), Scifres et al.
patent: 4730331 (1988-03-01), Burnham et al.
patent: 4760578 (1988-07-01), Oshima et al.
Eaton Larry R.
Jansen Michael
Ou Szutsun S.
Sergant Moshe
Wilcox Jaroslava Z.
Davie James W.
Goldstein Sol L.
Heal Noel F.
TRW Inc.
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