Superluminescent diode

Details Superluminescent diode Superluminescent diode

1989-11-22

1991-07-23

Gonzalez, Frank

Coherent light generators

Particular active media

Semiconductor

372 46, 372108, 357 17, H01S 319

Patent

active

050349554

ABSTRACT:
A superluminescent diode has an active layer confined in a channel cut into current blocking layers on a semiconductor substrate. This structure gives a small output beam diameter and high coupling efficiency, even when coupled into single-mode fiber. At the end of the channel distant from the output facet, the active layer makes slanting contact with a rough diffusing surface formed by the current blocking layers and substrate. This easily-manufactured diffusing surface reduces optical gain within the active layer, thereby preventing lasing without requiring an antireflection coating.

REFERENCES:
patent: 4821276 (1989-04-01), Alphonse et al.
patent: 4821277 (1989-04-01), Alphonse et al.
patent: 4872180 (1989-10-01), Rideout et al.
patent: 4888624 (1989-12-01), Johnston, Jr. et al.
patent: 4901123 (1990-02-01), Noguchi et al.
Imai et al., Fujitsu Sci. Tech. J., 18(4) (Dec. 82) pp. 541-61 "V-Grooved-Substrate Buried Heterostructure . . ."
Uchiyama et al., Jap. J. Appl. Phys. vol. 21(10, Oct. 82, pp. 1639, "GaIu AsP/InP DH Laser with a Current Blocking . . ."
Boeck et al. Frequent., vol. 33(10) (1979), pp. 278-83, "AlGuAs/GaAs Double-Heterostructure Super-. . ."
"Lateral Confinement InGaAsP Superluminescent Diode at 1.3 um," IEEE Journal of Quantum Electronics, vol. QE-19, No. 1, Jan., 1983, pp. 78-81.

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