Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Patent
1998-07-31
2000-09-12
Mintel, William
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
257 22, 257 25, 257183, 257197, 257198, 438312, H01L 31072, H01L 31109, H01L 310328, H01L 310336
Patent
active
061181366
ABSTRACT:
The invention is to develop a high-speed low power consumption resonant tunneling element--a superlatticed negative-differential-resistance (NDR) functional transistor. The proposed element exhibits amplification and obvious NDR phenomena simultaneously. In this element, the emitter region includes 5-period GaInAs/AlInAs super lattice resonant tunneling and emitter layers. Since the emitter--base interface is of homojunction, the collector--emitter offset voltage (V.sub.CE, offset) may be lowered down significantly. In addition, the produced infinitesimal potential (.DELTA.Ev) at GaInAs/AlInAs interface due to heterojunction in discrete valence bands may be applied as barriers to prohibit holes flow from base towards emitter. By doing so, the base current is remarkably depressed so as to elevate efficiency of emitter injection as well as current gain.
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Cheng Shiou-Ying
Liu Wen-Chau
Mintel William
National Science Council of Republic of China
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