Superlattice semiconductor having high carrier density

Details Superlattice semiconductor having high carrier density Superlattice semiconductor having high carrier density

1984-06-25

1987-09-22

Larkins, William D.

Metal treatment

Stock

Ferrous

357 4, 357 61, 357 63, 148DIG72, 148DIG160, 148DIG64, 148DIG65, H01L 29267, H01L 29205, H01L 29207

Patent

active

046958576

ABSTRACT:
The superlattice type semiconductor material has a multilayered structure of first layers of semiconductor containing impurities and having a thickness thinner than electron or hole wavelength and second layers of semiconductor free from impurities or insulator having such a thickness that electrons or holes may penetrate by tunneling effect, the first and second layers being alternately piled. Electrons or holes distribute uniformly over the entire of the multilayered structure to show a property of uniform semiconductor material.

REFERENCES:
patent: 3626257 (1971-12-01), Esaki et al.
patent: 4439782 (1984-03-01), Holonyak, Jr.
patent: 4450463 (1984-05-01), Chin

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