Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Patent
1989-04-10
1997-04-15
Prenty, Mark V.
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
257618, H01L 2906
Patent
active
056212224
ABSTRACT:
A superlattice semiconductor device comprises superlattice layers (4a, 4a', 5a) stacked on the whole surface of a trench (20) formed in a semiconductor substrate or on the whole surface of a projection (30) extending from a surface of the semiconductor substrate.
REFERENCES:
patent: 4721987 (1988-01-01), Baglee et al.
Kapon et al, "Moleculear Beam epitaxy of . . . Superlattice . . . on non-planar substrates", Applied Phys. Letters vol. 50, No. 6, 9 Feb. 1987, pp. 347-349.
Superlattice Negative Defferential Conductivity: "Superlattice and Negative Differential Conductivity in Semiconductors", by L. Esaki et al, Jan., 1970, pp. 61-65.
J. Appl. Phys. 58: "Resonant Tunneling Transistor with Quantum Well Base and High-Energy Injection: A New Negative Differential Resistance Device", by F. Capasso et al, 1 Aug. '85, 1366-1368.
Ext. Abstracts of the 18th Conf. on Sol. St. Dev. & Mat.: "Resonant Tunneling Through Amorphous Silicon/Silicon Nitride . . . ", by S. Miyazaki et al, Tokyo, 1986, pp. 675-678.
IEDM-86: "A Resonant-Tunneling Bipolar Transistor (RBT): A Proposal and Demonstration for New Functional Devices . . . " by T. Tutatsugi et al, 1986, 11.7, pp. 286-289.
IEDM-86: "Quantum Well Resonant Tunneling Bipolar Transistor Operating at Room Tempreture", by F. Capasso et al, 1986, 11.6, pp. 282-285.
Mitsubishi Denki & Kabushiki Kaisha
Prenty Mark V.
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