Superlattice quantum well thermoelectric material

Details Superlattice quantum well thermoelectric material Superlattice quantum well thermoelectric material

1994-01-24

1995-07-25

Saadat, Mahshid D.

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

257616, 257930, 62 32, 136203, H01L 2712, H01L 3528, H01L 29161, F25B 2102

Patent

active

054364671

ABSTRACT:
A multi-layer superlattice quantum well thermoelectric material using materials for the layers having the same crystalline structure. A preferred embodiment is a superlattice of Si and SiGe, both of which have a cubic structure. Another preferred embodiment is a superlattice of B-C alloys, the layers of which would be different stoichometric forms of B-C but in all cases the crystalline structure would be alpha rhombohedral.

REFERENCES:
patent: 3780425 (1973-12-01), Penn et al.
patent: 4835059 (1989-05-01), Kodato

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