Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Patent
1994-08-29
1996-08-27
Saadat, Mahshid
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
257 18, 257613, 257614, 257616, 257930, 62 32, 136203, H01L 2906, H01L 2912, H01L 2338, F25B 2102
Patent
active
055503870
ABSTRACT:
A thermoelectric element having a very large number of alternating layers of semiconductor material. The alternating layers all have the same crystalline structure. The inventors have demonstrated that materials produced in accordance with this invention provide figures of merit more than six times that of prior art thermoelectric materials. A preferred embodiment is a superlattice of Si, as a barrier material, and SiGe, as a conducting material, both of which have the same cubic structure. Another preferred embodiment is a superlattice of B--C alloys, the layers of which would be different stoichiometric forms of B--C but in all cases the crystalline structure would be alpha 0. In a preferred embodiment the layers are grown under conditions as to cause them to be strained at their operating temperature range in order to improve the thermoelectric properties.
REFERENCES:
patent: 3780425 (1973-12-01), Penn et al.
patent: 4835059 (1989-05-01), Kodato
patent: 4857972 (1989-08-01), Jorke et al.
"The Maximum Possible Conversion Efficiency of Silicon-Germanium", Slack & Hussain, J. Appl. Phys, vol. 70 No. (5) Sep. 91.
"Thermoelectric Figure of Merit of a one-dimensional conductor" Hicks & Dresselhaus, Am. Phy. Soc 1993 vol. 47#24, Jun. 1993.
Solid State Superlattices, Dohler, Scientific Am. Nov. 1993.
Elsner Norbert B.
Ghamaty Saeid
Hi-Z Corporation
Ross John R.
Saadat Mahshid
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