Superlattice optical device

Details Superlattice optical device Superlattice optical device

1983-03-22

1986-10-07

Davie, James W.

Coherent light generators

Particular component circuitry

Optical pumping

357 17, 357 30, 357 61, 372 45, H01L 3300, H01S 319

Patent

active

046162410

ABSTRACT:
A semiconductor optical device which includes a superlattice having direct transitions between conduction band and valence band states with the same wave vector, the superlattice being formed from a plurality of alternating layers of two or more different materials, at least the material with the smallest bandgap being an indirect bandgap material.

REFERENCES:
patent: 4319259 (1982-03-01), Ohsima et al.
patent: 4365260 (1982-12-01), Holonyak, Jr.
J. W. Matthews et al., "Defects in Epitaxial Multilayers", Journal of Crystal Growth 27 (1974), pp. 118-125.
G. C. Osbourn et al., "A GaAs.sub.x P.sub.1-x /GaP Strained-Layer Supperlattice", Appl. Phys. Lett. 41(2), Jul. 15, 1982, pp. 172-174.
Osbourn, "Strained-Layer Superlattices from Lattice Mismatched Materials", J. Appl. Phys. 53(3), Mar. 1982, pp. 1586-1589.

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