Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Patent
1995-07-05
1997-02-18
Jackson, Jr., Jerome
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
257 22, 257 25, 257191, H01L 2915
Patent
active
056043562
ABSTRACT:
The present invention provides an ohmic contact device which comprises: a first layer made of a first compound semiconductor having a first energy band gap; a superlattice in contact with the first layer, the superlattice having modulation-periods comprising alternating a first very thin layer made of the first compound semiconductor and a second very thin layer made of a second compound semiconductor having a second energy band gap being smaller than the first energy band gap, thicknesses of the first very thin layers being gradually reduced from an interface of the first layer to an opposite interface and thicknesses of the second very thin layers are gradually increased from the interface of the first layer to the opposite interface; a second layer made of the second compound semiconductor in contact with the superlattice; and a metal contact in contact with the second layer.
REFERENCES:
patent: 4620206 (1986-10-01), Ohta et al.
patent: 4797716 (1989-01-01), Chaffin et al.
patent: 4801984 (1989-01-01), Woodall
patent: 4914488 (1990-04-01), Yamane et al.
patent: 5031005 (1991-07-01), Futatsugi et al.
Guay John
Jackson, Jr. Jerome
NEC Corporation
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