Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Including integrally formed optical element
Reexamination Certificate
2007-01-23
2007-01-23
Picardat, Kevin M. (Department: 2822)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Including integrally formed optical element
C438S045000, C438S046000, C257S012000, C257S015000
Reexamination Certificate
active
11175797
ABSTRACT:
A superlattice nanocrystal Si—SiO2electroluminescence (EL) device and fabrication method have been provided. The method comprises: providing a Si substrate; forming an initial SiO2layer overlying the Si substrate; forming an initial polysilicon layer overlying the initial SiO2layer; forming SiO2layer overlying the initial polysilicon layer; repeating the polysilicon and SiO2layer formation, forming a superlattice; doping the superlattice with a rare earth element; depositing an electrode overlying the doped superlattice; and, forming an EL device. In one aspect, the polysilicon layers are formed by using a chemical vapor deposition (CVD) process to deposit an amorphous silicon layer, and annealing. Alternately, a DC-sputtering process deposits each amorphous silicon layer, and following the forming of the superlattice, polysilicon is formed by annealing the amorphous silicon layers. Silicon dioxide can be formed by either thermal annealing or by deposition using a DC-sputtering process.
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Hsu Sheng Teng
Li Tingkai
Zhuang Wei-Wei
Picardat Kevin M.
Ripma David C.
Sharp Laboratories of America Inc.
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