Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Non-heterojunction superlattice
Reexamination Certificate
2008-05-20
2008-05-20
Estrada, Michelle (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Non-heterojunction superlattice
C977S755000, C977S762000, C257S009000, C257S015000, C257S018000, C257SE29298, C257SE29072
Reexamination Certificate
active
07375368
ABSTRACT:
This disclosure relates to a system and method for creating nanowires. A nanowire can be created by exposing layers of material in a superlattice and dissolving and transferring material from edges of the exposed layers onto a substrate. The nanowire can also be created by exposing layers of material in a superlattice and depositing material onto edges of the exposed layers.
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Kornilovich Pavel
Mardilovich Peter
Peters Kevin Francis
Stasiak James
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