Superlattice doped layers for amorphous silicon photovoltaic cel

Details Superlattice doped layers for amorphous silicon photovoltaic cel Superlattice doped layers for amorphous silicon photovoltaic cel

1986-04-17

1988-01-12

Weisstuch, Aaron

Batteries: thermoelectric and photoelectric

Photoelectric

Cells

357 30, 357 59, 437 2, 437101, 437110, 148DIG160, H01L 3106

Patent

active

047189479

ABSTRACT:
Superlattice doped layers for amorphous silicon photovoltaic cells comprise a plurality of first and second lattices of amorphous silicon alternatingly formed on one another. Each of the first lattices has a first optical bandgap and each of the second lattices has a second optical bandgap different from the first optical bandgap. A method of fabricating the superlattice doped layers also is disclosed.

REFERENCES:
patent: 4492810 (1985-01-01), Ovshinsky et al.
patent: 4500744 (1985-02-01), Nozaki et al.
patent: 4598164 (1986-07-01), Tiedje et al.
B. Abeles et al, Phys. Rev. Letts., vol. 51 (No. 21), pp. 2003-2007, Nov. 1983.
S. Tsuda et al, Conf. Record, 18th IEEE Photovoltaic Specialists Conf., (1985), pp. 1295-1300 (published Apr. 28, 1986).
R. R. Arya et al, Conf. Record, 18th IEEE Photovoltaic Specialists Conf., (1985), pp. 1710-1711 (published Apr. 28, 1986).
Tiedje et al., Charge Transfer Doping in Amorphous Semiconductor Superlattices, Applied Physics Letters, vol. 45, Jul. 5, 1984, pp. 179-181.

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