Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Non-heterojunction superlattice
Reexamination Certificate
2006-08-25
2009-10-06
Potter, Roy K (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Non-heterojunction superlattice
C257S302000
Reexamination Certificate
active
07598517
ABSTRACT:
Semiconductor structures and methods are provided for a semiconductor device (40) employing a superjunction structure (41) and overlying trench (91) with embedded control gate (48). The method comprises, forming (52-6, 52-9) interleaved first (70-1, 70-2, 70-3, 70-4, etc.) and second (74-1, 74-2, 74-3, etc.) spaced-apart regions of first (70) and second (74) semiconductor materials of different conductivity type and different mobilities so that, in a first embodiment, the second semiconductor material (74) has a higher mobility for the same carrier type than the first semiconductor material (70), and providing (52-14) an overlying third semiconductor material (82) in which a trench (90, 91) is formed with sidewalls (913) having thereon a fourth semiconductor material (87) that has a higher mobility than the third material (82), adapted to carry current (50) between source regions (86), through the fourth (87) semiconductor material in the trench (91) and the second semiconductor material (74) in the device drift space (42) to the drain (56). In a further embodiment, the first (70) and third (82) semiconductor materials are relaxed materials and the second (74) and fourth (87) semiconductor materials are strained semiconductor materials.
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Baird Robert W.
de Fresart Edouard D.
Freescale Semiconductor Inc.
Ingrassia Fisher & Lorenz P.C.
Potter Roy K
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