Superhard dielectric compounds and methods of preparation

Details Superhard dielectric compounds and methods of preparation Superhard dielectric compounds and methods of preparation

2008-05-20

2008-05-20

Langel, Wayne A. (Department: 1754)

Chemistry of inorganic compounds

Boron or compound thereof

Oxygen containing

C423S325000, C423S326000, C423S327100, C423S365000

Reexamination Certificate

active

07374738

ABSTRACT:
Novel superhard dielectric compounds useful as gate dielectrics discovered. Low temperature methods for making thin films of the compounds on substrate silicon are provided. The methods comprise the step of contacting a precursor having the formula H3X—O—XH3, wherein X is silicon or carbon with a compound comprising boron or nitrogen in a chemical vapor deposition (CVD) chamber or with one or more atomic elements in a molecular beam epitaxial deposition (MBE) chamber. These thin film constructs are useful as components of microelectronic devices, and specifically as gate dielectrics in CMOS devices.

REFERENCES:
patent: 3765935 (1973-10-01), Rand et al.
patent: 4329482 (1982-05-01), Elsheikh
patent: 5571757 (1996-11-01), Groen et al.
patent: 5837217 (1998-11-01), Nielson et al.
patent: 6180809 (2001-01-01), Pillot et al.
Baraton et al.,—“Attribution Des Absorptions Du Spectre Infrarouge Aux Vibrations Fondamentales”, Mat. Res. Bull. 20, pp. 1239-1250, 1985, no month.
Buchanan, D.A., “Scaling the gate dielectric: Materials, integration, and reliability”, IBM J. Res. Develop., 43(3):245-264, 1999, no month.
Dey et al., “Atomic layer chemical vapor deposition of ZrO2-based dielectric films: Nanostructure and nanochemistry”, J. App. Phys., 93(7):4144-4157, 2003, no month.
Dey et al., “Electrical Properties of Paraelectric (Pb0.72La0.28)TiO3Thin Films with High Linear Dielectric Permittivity: Schottky and Ohmic Contacts”, Jpn. J. Appl. Phys., 34:3142-3152, 1995, no month.
Garfunkel et al., eds., “Fundamental Aspects of Ultrathin Dielectrics on Si-based Devices”, pp. 79-88, Kluwer Acad. Publishers, Dordrecht, The Netherlands, 1998, no month.
Gusev et al., “Growth and characterization of ultrathin nitrided silicon oxide films”, IBM J. Res. Develop., 43:265-285, 1999, no month.
Habraken et al., “Silicon nitride and oxynitride films”, Mater. Sci. Eng., R12:123-175, 1994, no month.
Hattangady et al., “Integrated processing of silicon oxynitride films by combined plasma and rapid-thermal processing”, J. Vac. Sci. Technol., 14(6):3017-3023, 1996, no month.
Houssa et al., “Effect of O2post-deposition anneals on the properties of ultra-thin SiOx/ZrO2gate dielectric stacks”, Semicond. Sci. Technol., 16:31-38, 2001, no month.
Idrestedt et al., “Structure of Si2N2O”, Acta Chem. Scand. 18(8):1879-1886, 1964, no month.
Johnson et al., “Physical and electrical properties of noncrystalline Al2O3 prepared by remote plasma enhanced chemical vapor deposition”, J. Vac. Sci. Technol. 19(4):1353-1360, 2001, no month.
Lai et al., “A study of the relationship between Si/SiO2between interface charges and roughness”, J. Vac. Sci. Technol., 17(1):53-59, 1999, no month.
Lednor et al., “The preparation of silicon oxynitride, Si2N2O, as high surface area powder by reaction of silica with ammonia at 1100° C”, J. Chem. Soc., Chem. Commun., pp. 320-321, 1989, no month.
Lucovsky, G., “Ultrathin nitrided gate dielectrics: Plasma processing chemical characterization, performance and reliability”, IBM J. Res. Develop., 43(3):301-326, 1999, no month.
Ma, T.P., “JVD Silicon Nitride and Titanium Oxide as Advanced Gate Dielectrics”, Mat. Res. Symp. Proc., 567:73-112, 1999, no month.
Roucka et al., “Low-temperature epitaxial growth of the quarternary wide band gap semiconductor SiCAIN”, Phys. Rev. Let., 88(20), 4 pages, 2002, no month.
Roucka et al., “Low-temperature growth of SiCAIN films of high hardness on Si(111) substrates”, Appl. Phys. Let., 79(18):2880-2882, 2001, no month.
Schroder, D., “Semiconductor Material and Device Characterization”, 2nded., Chapter 1, John Wiley & Sons, Inc., 1998, no month.
Shriver et al., “The manipulation of airsensitive compounds”, pp. 289-311, Wiley & Sons, Inc., 1986, no month.
Srinivasa et al., “High-pressure neutron diffraction study of Si2N2O”, J. Appl. Cryst., 10:167-171, 1977, no month.
van Weeren et al., “Synthesis and characterization of amorphous Si2N2O”, J. Am. Ceram. Soc., 77:2699-2702, 1994, no month.
Wallace et al., eds., “Alternative gate dielectrics for microelectronics”, MRS Bulletin, 27(3):186-191, 2002, no month.

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