Supercritical etching compositions and method of using same

Details Supercritical etching compositions and method of using same Supercritical etching compositions and method of using same

1997-05-05

2000-11-21

Gulakowski, Randy

Etching a substrate: processes

Gas phase and nongaseous phase etching on the same substrate

438689, 252 794, 252 795, C23F 110

Patent

active

061498289

ABSTRACT:
A supercritical etching composition and method for etching an inorganic material of a semiconductor-based substrate are provided. The method includes providing a semiconductor-based substrate having an exposed inorganic material and exposing the substrate to the supercritical etching composition, whereby exposed inorganic material is removed from the substrate. In one embodiment, the supercritical etching composition includes a supercritical component, which is not capable of etching a particular exposed inorganic material, and a nonsupercritical etching component, which is capable of etching the particular exposed inorganic material. In another embodiment, the supercritical etching composition includes a supercritical component, which is capable of etching the particular exposed inorganic material.

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