Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Tunneling through region of reduced conductivity
Patent
1997-04-14
1998-12-29
Crane, Sara W.
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Tunneling through region of reduced conductivity
505873, H01L 2906
Patent
active
058544933
ABSTRACT:
A superconducting device has a substrate, and a superconducting channel provided by an oxide superconductor thin film formed to have an angle with respect to a deposition surface of the substrate. A superconductor source electrode region and a superconductor drain electrode region are formed at opposite ends of the superconducting channel, so that a superconducting current can flow through the superconducting channel between the superconductor source electrode region and the superconductor drain electrode region. A gate electrode region is formed of a oxide superconductor thin film which is deposited in parallel to the deposition surface of the substrate and which has an end portion which abuts with an insulating layer which separates the end portion and the superconducting channel so as to control superconducting current flow through the superconducting channel.
REFERENCES:
patent: 4831421 (1989-05-01), Gallagher et al.
patent: 5179426 (1993-01-01), Iwamatsu et al.
Wu et al, "High Critical Currents in Epitaxial yBa CuO Thin Flims on Silicon with Buffer Layers", Appl. Phys. Lett. , vol. 54, #8, Feb. 1989 pp. 754-756.
Linker et al, "Control of Growth Direction of Epitaxial y-Ba--Cu-O Thin Films on SrTi03 Substrates", Solid State Communications, vol. 69, #3, 1989, pp. 249-253.
Iiyama Michitomo
Inada Hiroshi
Nakamura Takao
Crane Sara W.
Sumitomo Electric Industries Ltd.
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