Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Tunneling through region of reduced conductivity
Patent
1997-03-27
2000-02-08
Saadat, Mahshid
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Tunneling through region of reduced conductivity
257 31, 257 32, 257 34, 505190, 505191, 505238, H01L 2906, H01L 3922, H01B 1200
Patent
active
06023072&
ABSTRACT:
A Josephson junction having a laminar structure which includes a substrate, a first superconductive layer deposited on the substrate, a non-superconductive layer deposited on the first superconductive layer, and a second superconductive layer deposited on the non-superconductive layer. The laminar structure has three segments, including: a first planar segment, a second planar segment, and a ramp segment connecting the two planar segments at an ascent angle thereto. The layers are of substantially uniform thickness in the three segments, with the substrate being thinner in the second planar segment than in the first planar segment and having a constantly-decreasing thickness in the ramp segment. The superconductive layers and the non-superconductive layer are deposited in-situ and are epitaxial with a c-axis in a direction substantially normal to the first and second planar segments.
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Saadat Mahshid
TRW Inc.
Wilson Allan R.
Yatsko Michael S.
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