Superconductor device

Details Superconductor device Superconductor device

1996-10-15

1999-04-13

Crane, Sara

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Ballistic transport device

257 30, 257197, 257472, 257661, H01L 2906

Patent

active

058941355

ABSTRACT:
A superconductor device comprises a Schottky barrier region S.sub.B for selectively passing injected carriers and a collector barrier region L.sub.B for selectively blocking leakage carriers. The Schottky barrier region is formed in a low permittivity region .epsilon..sub.L between the first operating region (B) made of superconductor material and the second operating region (C) made of either semiconductor material or metallic material. A resonance region R is formed in the low permittivity region .epsilon..sub.L.

REFERENCES:
patent: 4970395 (1990-11-01), Kruse, Jr.
patent: 5455451 (1995-10-01), Usagawa et al.
Kazuhiko Takahashi, et al., "Improvement of the Base/Collector Interface in Superconducting-Base Transistors".

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