Active solid-state devices (e.g. – transistors – solid-state diode – Superconductive contact or lead
Patent
1993-04-22
1995-10-03
Saadat, Mahshid D.
Active solid-state devices (e.g., transistors, solid-state diode
Superconductive contact or lead
257 14, 257 30, 257187, 257663, 427 62, 427 63, 505220, 505235, H01L 29161, H01L 2348, H01B 1200
Patent
active
054554519
ABSTRACT:
Superconductized electronic devices, such as a Josephson junction device, or superconductized optical devices represented by a light emitting and receiving devices of semiconductor laser are available using semiconductor materials which normally have no superconducting characteristics. The devices can operate by controlling the behavior of a Cooper pair in an active region which is formed in the semiconductor in advance using the penetrating phenomenon of the Cooper pair caused in the semiconductor proximate to the superconductor.
REFERENCES:
patent: 4837609 (1989-06-01), Gurvitch et al.
patent: 4843446 (1989-06-01), Nishino et al.
patent: 4881238 (1989-11-01), Chinone et al.
patent: 5023687 (1991-06-01), Tanoue et al.
patent: 5063426 (1991-11-01), Chandrasekhar et al.
patent: 5150185 (1992-09-01), Yamada
patent: 5212150 (1993-05-01), Yamazaki
"Influence of Short Coherence Length on the Superconducting Proximity Effect of Silicon-Coupled Junctions", Hatano et al Appl. Phys. Lett., vol. 53, #5, Aug. 1988, pp. 409-411.
"S-N-S Josephson Junction Consisting of Y-Ba-Cu-O/Au/Nb Thin Films", Akoh et al, Jap. J. Appl. Phys., vol. 27, #4, Apr. 1988, pp. L519-L521.
"Y-Ba-Cu-O/Nb Tunnel Type Josephson Junctions", Atsuki et al, Jap. J. Appl. Phys., vol. 29, #9, Sep. 1987, pp. L1443-L1444.
"Carrier-Concentration Dependence of Critical Superconducting Current Induced by the Proximity Effect in Silicon", Nishino et al, Physical Rev. B, Feb. 1986, pp. 2042-2045 vol. 33, #3.
Ohnaka et al, "A Low Dark Current InGa As/InP P-I-N Photodiode with Covered Mesa Structure," IEEE Transactions on Electron Devices, vol. ED-34, No. 2, Feb. 1987, pp. 199-204.
"Superconducting Proximity Effect in the Native Inversion Layer on InAs", Takayanagi et al, Phys. Rev. Lett., vol. 54, #22, Jun. 1985, pp. 2449-2452.
"Physics of Semiconductor Devices", Sze, 2nd Edition, Wiley-Interscience Publication, 1981 Sec. 12.5 Laser Operating Characteristics, pp. 724-730.
"Feasibility of hybrid Josephson field effect transistors", J. Appln. Phys., vol. 51(5), May 1980, pp. 2736-2743, T. D. Clark.
"Observation of semiconductor-semimetal transition in INAS-GaSb superlattices", Appl. Phys. Lett. 35(12), 15 Dec. 1979, pp. 939-942, L. L. Chang.
Applied Physics Letters, vol. 49, No. 25, Dec. 22, 1986, pp. 1741-1743, A. W. Kleinsasser et al., "n-InAs/GaAs heterostructure superconducting weak links with Nb electrodes".
IEEE Transactions on Electron Devices, vol. 36, No. 11, Nov. 1989; p. 2628, Proceedings of the 47th Annual Device Research Conference, 19th-21st Jun. 1989, A. W. Kleinsasser et al., "InGaAs superconducting JFET's with NK electrodes".
Extended Abstracts, Electrochemical Society, No. 87-2, 1987, p. 1087, H. Hayakawa, "Josephson junction materials and technology".
B. D. Josephson in Physics Letter, vol. 1, p. 251, 1962.
"Ultra High Josephson Devices", edited by Y. Hayakawa, Baifukan, 1986.
T. D. Clark et al., "Feasibility of Hybrid Josephson Field Transistor", Journal of Applied Physics, vol. 51, No. 5, pp. 2736-2743, May 1980.
Physical Review, vol. B33, p. 2042, 1986.
T. Usagawa et al., IEDM 87 Technical Digest, pp. 78-81.
Aida Toshiyuki
Kawasaki Masashi
Ogawa Kensuke
Usagawa Toshiyuki
Hitachi , Ltd.
Saadat Mahshid D.
LandOfFree
Superconductized semiconductor device using penetrating Cooper p does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Superconductized semiconductor device using penetrating Cooper p, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Superconductized semiconductor device using penetrating Cooper p will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1079184