Superconductivity based on bose-einstein condensation of...

Details Superconductivity based on bose-einstein condensation of... Superconductivity based on bose-einstein condensation of...

2011-06-28

2011-06-28

Stark, Jarrett J (Department: 2823)

Semiconductor device manufacturing: process

Having superconductive component

C257S661000

Reexamination Certificate

active

07968352

ABSTRACT:
The invention describes a method of achieving superconductivity in Group IV semiconductors via the addition of doubly charged impurity atoms to the crystal lattice. The doubly charged impurities function as composite bosons in the semiconductor. Increasing the density of the composite bosons to a level where their wavefunctions overlap, results in the formation of a Bose condensate. The concentration of the doubly charged impurity atoms in the host lattice and the binding energy of the impurities are important factors in determining whether a Bose condensate will form. Doubly charged impurities must be present in the semiconductor at a concentration at which they exhibit overlapping wavefunctions, but still exist within the crystal lattice as bosons.

REFERENCES:
patent: 5016064 (1991-05-01), Goronkin
patent: 5142341 (1992-08-01), Goronkin et al.

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