Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Tunneling through region of reduced conductivity
Patent
1992-12-23
1998-05-19
Whitehead, Carl W.
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Tunneling through region of reduced conductivity
257 35, 2503362, 505843, 505849, 505866, H01L 310256, H01L 3922, G01J 100, G01N 2400
Patent
active
057539359
ABSTRACT:
In a radiation detection device using superconducting tunnel junctions, the increase in electric capacitance and the decrease in electric resistance due to the increase in junction area for improvement of the detection efficiency are largely repressed by the invention. The junctions are connected in series. The number of the series-connected junctions is settled in the range of larger than 0.05 (SC.sub.o /C')0.5 and smaller than 20 (SC.sub.o /C')0.5 or 10SCo/C', whichever is larger, where S is the total area of the junctions, cm.sup.2, C.sub.o is the electric capacitance per unit area of the junctions, F/cm.sup.2, and C' is the electric capacitance connected to the device in parallel so as to transfer and amplify the signals from the device, F.
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Kurakado Masahiko
Matsumura Atsuki
Takahashi Tooru
Nippon Steel Corporation
Tang Alice W.
Whitehead Carl W.
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