Superconductive optoelectronic devices with the basic substance

Superconductor technology: apparatus – material – process – High temperature devices – systems – apparatus – com- ponents,... – Photoconductive – light transmissive – light emissive – or...

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Details

505702, 505193, 257 35, 257 39, 257462, H01L 3922, H01L 3912, H01B 1200

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active

054629160

ABSTRACT:
The disclosed superconductive optoelectronic device with the basic substance Bi.sub.2 O.sub.3 or Bi.sub.2 O.sub.3 ;M.sup.2+ (M=Ca,Sr,Cu) of superconductive-conjugate photoconductivity has a substrate, a photoconductive gate region formed on the substrate, and a source region and a drain region formed on the substrate at opposite sides of the gate region so as to face toward each other across the gate region. The source region and the drain region are made of a Bi-based superconductive material. The gate region is made of such the basic material Bi.sub.2 O.sub.3 or Bi.sub.2 O.sub.3 ;M.sup.2+ (M=Ca,Sr,Cu) of superconductive-conjugate photoconductivity, which reveals photoconductivity at a temperature below the transition temperature of the above relevant Bi-based superconductive material. Also disclosed are superconductive optoelectronic devices formed of an organized integration of the above superconductive optoelectronic devices to develop effectively a new field of "Superconductive Optoelectronics".

REFERENCES:
patent: 4990487 (1991-02-01), Masumi
Journal of Applied Physics, vol. 59, No. 11, Jun. 1, 1986, New York, US, pp. 3807-3814; Y. Enomoto et al: `Optical detector using superconducting BaPb.sub.0.7 Bi.sub.03 O.sub.3 thin films`.
IEEE Journal of Quantum Electronics, vol. 25, No. 11, Nov. 1989, New York, US, pp. 2405-2409; W. Eidelloth et al: `Optical Response of Bulk Bi-Sr-Ca-Cu-O`.

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