Superconductive optoelectronic device with the basic substance C

Superconductor technology: apparatus – material – process – High temperature – per se – Having tc greater than or equal to 150 k

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505702, 257 35, 257 39, H01L 3922, H01L 3912, H01B 1200

Patent

active

052448703

ABSTRACT:
The disclosed superconductive optoelectronic device stems from the inventor's important discovery of a phenomenon that the basic substance Cu.sub.2 O reveals photoconductivity below several temperatures T.sub.ps in steps thereof, T.sub.ps being comparable with a series of the critical temperatures of superconductivity T.sub.sc of relevant Cu-based superconductors, and such photoconductivity of the basic substance is in a conjugate relationship with the superconductivity of the above Cu-based superconductors. The device of the invention has a gate region made of the above basic substance Cu.sub.2 O and a source region and a drain region made of the above Cu-based superconductors, the source and drain regions connected to each other, so that electric current therebetween at a temperature below the step temperature T.sub.ps of the basic substance is switched and/or controlled by the incident light intensity illuminated to the gate region. Also disclosed is an apparatus carrying a plurality with diversity of the above superconductive optoelectronic devices formed therein of an organized space-integration at ultrahigh density, in the form of arrays, and the like, to further develop effectively a new field of "Superconductive Optoelectronics".

REFERENCES:
patent: 4651172 (1987-03-01), Watanabe et al.
patent: 4990487 (1991-02-01), Masumi
"The Color of Polarization in Cuprate Superconductors", AMSAHTS '90 Journal of the Physical Society of Japan, vol. 60, No. 11, pp. 3633-3636 (Nov., 1991).
Journal of the Physical Socety of Japan, vol. 58, No. 5, pp. 1717-1724 (May 1989).
Japanese Journal of Applied Physics Letters, vol. 26, No. 8, Aug. 1987, Tokyo, JP pp. 1320-1322; Nishino T. et al; Light Detection by Superconducting Weak link Fabricated with High-Critical-Temperature Oxide-Suerpconductor Film.

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