Superconductor technology: apparatus – material – process – High temperature – per se – Having tc greater than or equal to 150 k
Patent
1990-06-07
1992-04-07
Lieberman, Paul
Superconductor technology: apparatus, material, process
High temperature , per se
Having tc greater than or equal to 150 k
252521, 501123, 501152, 505780, C01F 1102, C01G 302, H01L 3912
Patent
active
051028611
ABSTRACT:
Improvement in the superconducting transition temperature of superconductive materials which have perovskite structure or similar structure to perovskite such as typically Y-Ba-Cu-O type perovskite compounds is obtained by implanting phosphorus ion in the superconductive materials.
REFERENCES:
Logren "Group V, VI and VII Dopant effects on YBa.sub.2 Cu.sub.3 O.sub.x " Cevamz Developments 1988 pp. 329-333.
Kanai "Dopant Effects on the Superconductivity in . . . " Jup. Jnl. Appl. Phys. v. 28(4) Apr. 1989, pp. L551-L554.
Masuda "Ion Implantation Effect in High Tc Oxide . . . " Nucl. Instrum. Methods Phys. B46 1990 pp. 284-286.
Boyd John
Lieberman Paul
Nippon Valqua Industries, Ltd.
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