Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Tunneling through region of reduced conductivity
Patent
1992-05-22
1994-04-19
Jackson, Jerome
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Tunneling through region of reduced conductivity
257 33, 257661, H01L 3922
Patent
active
053048172
ABSTRACT:
A superconductive circuit is fabricated on a substrate with a major surface, and comprises a wiring layer of superconductive oxide with the a-b plane orientation substantially parallel to the major surface, and a Josephson junction electrically coupled with the wiring layer, wherein the josephson junction comprises a lower electrode of superconductive oxide having the a-b plane orientation substantially perpendicular to the major surface and embedded into the wiring layer so that the structure achieves both long coherent length desirable for large design margin of the junction as well as large amount of current passing through the wiring layer.
REFERENCES:
patent: 5194419 (1993-03-01), Shiga et al.
H. Akoh et al, "Anisotropic Josephson junctions of Y-Ba-Cu-O/Au/Nb film sandwiches", Appl. Phys. Lett. 56 (15), Apr. 9, 1990, pp. 1487-1489.
Bowers Courtney A.
Jackson Jerome
NEC Corporation
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