Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Tunneling through region of reduced conductivity
Patent
1993-12-22
1996-06-18
Saadat, Mahshid
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Tunneling through region of reduced conductivity
257 35, 257 38, 505193, 505237, 505239, 427 62, 427 63, H01L 2906, H01L 3922, B05D 512, H01B 1200
Patent
active
055280528
ABSTRACT:
Proposed is a method for operating a field-effect device comprised of a superconducting current channel having source and drain electrodes connected thereto, said superconducting current channel being separated from a gate electrode by an insulating layer, where the resistance of said current channel is controlled by varying the critical current of the superconducting material through the application of an electrical field across the superconducting current channel, which in turn changes the density of the mobile charge carriers in the superconducting material. Taught is also an inverted MISFET device for performing that method, the device being characterized in that on an electrically conductive substrate an insulating layer is provided which in turn carries a layer consisting of a superconducting material, and that a gate electrode is attached to said substrate, and source and drain electrodes are electrically connected to said superconductor layer. Advantageously, between the substrate and the superconducting layer, a metallic passivation layer may be provided.
REFERENCES:
patent: 5075283 (1991-12-01), De
patent: 5128316 (1992-07-01), Agostinelli et al.
Van Duzer et al, "Principles Of Superconductive Devices, and Circuits," Elsvier, New York, 1981, pp. 351-355, Chapter 8.
Bednorz Johannes G.
Mannhart Jochen D.
Mueller Carl A.
Schlom Darrell G.
International Business Machines - Corporation
Morris Daniel P.
Saadat Mahshid
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