Superconductor technology: apparatus – material – process – High temperature – per se – Having tc greater than or equal to 150 k
Patent
1991-12-27
1993-11-16
Ryan, Patrick J.
Superconductor technology: apparatus, material, process
High temperature , per se
Having tc greater than or equal to 150 k
505701, 505702, 428688, 428930, 428457, B32B 900
Patent
active
052623947
ABSTRACT:
A ceramic superconductor comprising a metal oxide substrate, a ceramic high temperature superconductive material, and a intermediate layer of a material having a cubic crystal structure, said layer situated between the substrate and the superconductive material is provided, and a structure for supporting a ceramic superconducting material is provided, said structure comprising a metal oxide substrate, and a layer situated over the surface of the substrate to substantially inhibit interdiffusion between the substrate and a ceramic superconducting material deposited upon said structure.
REFERENCES:
patent: 4983515 (1991-01-01), Komuro
patent: 5047388 (1991-09-01), Rohr
patent: 5087605 (1992-02-01), Hegde et al.
T. Inoue et al., "Epitaxial Growth of CeO.sub.2 Layers on Silicon," Applied Physics Letters 56 (14), 1332-1333, Apr. 2, 1990.
H. Nagata et al., "Heteroepitaxial Growth of CeO.sub.2 (001) Films on Si (001) Substrates by Pulsed Laser Deposition in Ultrahigh Vacuum," Japanese Journal of Applied Physics, 30 (6B), L1136-L1138, Jun. 1991.
C. T. Rogers et al., "Fabrication of Heteroepitaxial YBa.sub.2 Cu.sub.3 O.sub.7-x --PrBa.sub.2 Cu.sub.3 O.sub.7-x --YBa.sub.2 Cu.sub.3 O.sub.7-x Josephson Devices Grown by Laser Deposition," Applied Physics Letters 55 (19), 2032-2033, Nov. 6, 1990.
J. J. Kingston et al., "Multilayer YBa.sub.2 Cu.sub.3 O.sub.x --SrTiO.sub.3 --YBa.sub.2 Cu.sub.3 O.sub.x Films for Insulating Crossovers," Applied Physics Letters 56 (2), 189-191, Jan. 8, 1990.
A. B. Berezin et al., "Y.sub.1 Ba.sub.2 Cu.sub.3 O.sub.7-x Thin Films Grown on Sapphire with Epitaxial MgO Buffer Layers," Applied Physics Letters 57 (1), 90-92, Jul. 2, 1990.
D. K. Fork et al., "High Critical Currents in Strained Epitaxial YBa.sub.2 Cu.sub.3 O.sub.7-d on Si," Applied Physics Letters 57 (11), 1161-1163, Sep. 10, 1990.
X. D. Wu et al., "Epitaxial Yttria-Stabilized Zirconia on (1101) Sapphire for YB.sub.2 Cu.sub.3 O.sub.7-d Thin Films," Applied Physics Letters 58 (3), 304-306, Jan. 21, 1991.
H. Myoren et al., "Crystalline Qualities and Critical Densities of As-Grown Ba.sub.2 YCu.sub.3 O.sub.x Thin Films on Silicon with Buffer Layers," Japanese Journal of Applied Physics, vol. 29, No. 6, L955-L957, Jun. 1990.
M. Yoshimoto et al., "In Situ Rheed Observation of CeO.sub.2 Film Growth on Si by Laser Ablation Deposition in Ultrahigh-Vacuum," Japanese Journal of Applied Physics, vol. 29, No. 7, L1199-L1202, Jul. 1990.
X. D. Wu et al., "Expitaxial OeO.sub.2 Films as Buffer Layers for High-Temperature Superconducting Thin Films," Applied Physics Letters 58, (19) 2165-2167, May 13.
K. M. Beauchamp et al., "Barrier Technology for Dysprosium Barium Copper Oxide (DyBa.sub.2 Cu.sub.3 O.sub.7-x) Junctions and Related Structures," Chem. Abst. 114, (20): 197437Z.
Sahu et al, "Overview of High Tc Superconductivity" in Chemistry of High Tc Superpconductors, ACS 1988, 1985 Desk Manual, Microelectronic Manufacturing and Testing pp. 79-80.
Grant et al, Physica C, 185-189, 2099-2100 (1991) Originally presented in Kanazawa, Japan, Jul. 1991.
Cotton & Wilkinson, Advanced Inorganic Chemistry Wiley, New York, 1980, pp. 990-991.
Muenchausen Ross E.
Wu Xin D.
Cottrell Bruce H.
Gaetjens Paul D.
Jewik Patrick R.
Moser William R.
Ryan Patrick J.
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